Realization of Minimum and Maximum Gate Function in Ta(2)O(5)-based Memristive Devices

Redox-based resistive switching devices (ReRAM) are considered key enablers for future non-volatile memory and logic applications. Functionally enhanced ReRAM devices could enable new hardware concepts, e.g. logic-in-memory or neuromorphic applications. In this work, we demonstrate the implementatio...

Descripción completa

Detalles Bibliográficos
Autores principales: Breuer, Thomas, Nielen, Lutz, Roesgen, Bernd, Waser, Rainer, Rana, Vikas, Linn, Eike
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4820708/
https://www.ncbi.nlm.nih.gov/pubmed/27046279
http://dx.doi.org/10.1038/srep23967

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4820708/
https://www.ncbi.nlm.nih.gov/pubmed/27046279
http://dx.doi.org/10.1038/srep23967

Ejemplares similares