InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperatur...

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Detalles Bibliográficos
Autores principales: Meng, Xiao, Xie, Shiyu, Zhou, Xinxin, Calandri, Niccolò, Sanzaro, Mirko, Tosi, Alberto, Tan, Chee Hing, Ng, Jo Shien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society Publishing 2016
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4821258/
https://www.ncbi.nlm.nih.gov/pubmed/27069647
http://dx.doi.org/10.1098/rsos.150584

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4821258/
https://www.ncbi.nlm.nih.gov/pubmed/27069647
http://dx.doi.org/10.1098/rsos.150584

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