Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure...

Descripción completa

Detalles Bibliográficos
Autores principales: Huang, Yi-Jen, Chao, Shih-Chun, Lien, Der-Hsien, Wen, Cheng-Yen, He, Jr-Hau, Lee, Si-Chen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4823777/
https://www.ncbi.nlm.nih.gov/pubmed/27052322
http://dx.doi.org/10.1038/srep23945

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4823777/
https://www.ncbi.nlm.nih.gov/pubmed/27052322
http://dx.doi.org/10.1038/srep23945

Ejemplares similares