Inhibition of unintentional extra carriers by Mn valence change for high insulating devices

For intrinsic oxide semiconductors, oxygen vacancies served as the electron donors have long been, and inevitably still are, attributed as the primary cause of conductivity, making oxide semiconductors seem hard to act as high insulating materials. Meanwhile, the presence of oxygen vacancies often l...

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Detalles Bibliográficos
Autores principales: Guo, Daoyou, Li, Peigang, Wu, Zhenping, Cui, Wei, Zhao, Xiaolong, Lei, Ming, Li, Linghong, Tang, Weihua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4828704/
https://www.ncbi.nlm.nih.gov/pubmed/27068227
http://dx.doi.org/10.1038/srep24190

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4828704/
https://www.ncbi.nlm.nih.gov/pubmed/27068227
http://dx.doi.org/10.1038/srep24190

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