Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excit...

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Detalles Bibliográficos
Autores principales: Bang, Junhyeok, Sun, Y. Y., Song, Jung-Hoon, Zhang, S. B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4830943/
https://www.ncbi.nlm.nih.gov/pubmed/27075818
http://dx.doi.org/10.1038/srep24404

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4830943/
https://www.ncbi.nlm.nih.gov/pubmed/27075818
http://dx.doi.org/10.1038/srep24404

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