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Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices
Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excit...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4830943/ https://www.ncbi.nlm.nih.gov/pubmed/27075818 http://dx.doi.org/10.1038/srep24404 |