Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires’ suitability for forming a gate-all-around (GAA) configu...

Descripción completa

Detalles Bibliográficos
Autores principales: Guerfi, Youssouf, Larrieu, Guilhem
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4837198/
https://www.ncbi.nlm.nih.gov/pubmed/27094824
http://dx.doi.org/10.1186/s11671-016-1396-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4837198/
https://www.ncbi.nlm.nih.gov/pubmed/27094824
http://dx.doi.org/10.1186/s11671-016-1396-7

Ejemplares similares