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Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around
Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires’ suitability for forming a gate-all-around (GAA) configu...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4837198/ https://www.ncbi.nlm.nih.gov/pubmed/27094824 http://dx.doi.org/10.1186/s11671-016-1396-7 |