A study on the electron transport properties of ZnON semiconductors with respect to the relative anion content

High-mobility zinc oxynitride (ZnON) semiconductors were grown by RF sputtering using a Zn metal target in a plasma mixture of Ar, N(2), and O(2) gas. The RF power and the O(2) to N(2) gas flow rates were systematically adjusted to prepare a set of ZnON films with different relative anion contents....

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Detalles Bibliográficos
Autores principales: Park, Jozeph, Kim, Yang Soo, Ok, Kyung-Chul, Park, Yun Chang, Kim, Hyun You, Park, Jin-Seong, Kim, Hyun-Suk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4838846/
https://www.ncbi.nlm.nih.gov/pubmed/27098656
http://dx.doi.org/10.1038/srep24787

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4838846/
https://www.ncbi.nlm.nih.gov/pubmed/27098656
http://dx.doi.org/10.1038/srep24787

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