Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure

In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct...

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Detalles Bibliográficos
Autores principales: Huang, Zhong-Mei, Huang, Wei-Qi, Liu, Shi-Rong, Dong, Tai-Ge, Wang, Gang, Wu, Xue-Ke, Qin, Cao-Jian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4838848/
https://www.ncbi.nlm.nih.gov/pubmed/27097990
http://dx.doi.org/10.1038/srep24802

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4838848/
https://www.ncbi.nlm.nih.gov/pubmed/27097990
http://dx.doi.org/10.1038/srep24802

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