Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire

Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~10(12) A/m(2). Here, we demonstra...

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Detalles Bibliográficos
Autores principales: Zhang, S. F., Gan, W. L., Kwon, J., Luo, F. L., Lim, G. J., Wang, J. B., Lew, W. S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4838865/
https://www.ncbi.nlm.nih.gov/pubmed/27098108
http://dx.doi.org/10.1038/srep24804

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4838865/
https://www.ncbi.nlm.nih.gov/pubmed/27098108
http://dx.doi.org/10.1038/srep24804

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