Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit...

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Detalles Bibliográficos
Autores principales: Alymov, Georgy, Vyurkov, Vladimir, Ryzhii, Victor, Svintsov, Dmitry
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4838945/
https://www.ncbi.nlm.nih.gov/pubmed/27098051
http://dx.doi.org/10.1038/srep24654

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4838945/
https://www.ncbi.nlm.nih.gov/pubmed/27098051
http://dx.doi.org/10.1038/srep24654

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