Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode

We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution tr...

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Detalles Bibliográficos
Autores principales: Jung, Byung Oh, Bae, Si-Young, Lee, Seunga, Kim, Sang Yun, Lee, Jeong Yong, Honda, Yoshio, Amano, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4840131/
https://www.ncbi.nlm.nih.gov/pubmed/27102904
http://dx.doi.org/10.1186/s11671-016-1441-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4840131/
https://www.ncbi.nlm.nih.gov/pubmed/27102904
http://dx.doi.org/10.1186/s11671-016-1441-6

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