Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode

We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution tr...

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Detalles Bibliográficos
Autores principales: Jung, Byung Oh, Bae, Si-Young, Lee, Seunga, Kim, Sang Yun, Lee, Jeong Yong, Honda, Yoshio, Amano, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4840131/
https://www.ncbi.nlm.nih.gov/pubmed/27102904
http://dx.doi.org/10.1186/s11671-016-1441-6
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author Jung, Byung Oh
Bae, Si-Young
Lee, Seunga
Kim, Sang Yun
Lee, Jeong Yong
Honda, Yoshio
Amano, Hiroshi
author_facet Jung, Byung Oh
Bae, Si-Young
Lee, Seunga
Kim, Sang Yun
Lee, Jeong Yong
Honda, Yoshio
Amano, Hiroshi
author_sort Jung, Byung Oh
collection PubMed
description We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.
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spelling pubmed-48401312016-05-16 Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode Jung, Byung Oh Bae, Si-Young Lee, Seunga Kim, Sang Yun Lee, Jeong Yong Honda, Yoshio Amano, Hiroshi Nanoscale Res Lett Nano Express We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture. Springer US 2016-04-22 /pmc/articles/PMC4840131/ /pubmed/27102904 http://dx.doi.org/10.1186/s11671-016-1441-6 Text en © Jung et al. 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Jung, Byung Oh
Bae, Si-Young
Lee, Seunga
Kim, Sang Yun
Lee, Jeong Yong
Honda, Yoshio
Amano, Hiroshi
Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
title Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
title_full Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
title_fullStr Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
title_full_unstemmed Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
title_short Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
title_sort emission characteristics of ingan/gan core-shell nanorods embedded in a 3d light-emitting diode
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4840131/
https://www.ncbi.nlm.nih.gov/pubmed/27102904
http://dx.doi.org/10.1186/s11671-016-1441-6
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