Cargando…

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode

We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution tr...

Descripción completa

Detalles Bibliográficos
Autores principales:	Jung, Byung Oh, Bae, Si-Young, Lee, Seunga, Kim, Sang Yun, Lee, Jeong Yong, Honda, Yoshio, Amano, Hiroshi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2016
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4840131/ https://www.ncbi.nlm.nih.gov/pubmed/27102904 http://dx.doi.org/10.1186/s11671-016-1441-6

Ejemplares similares

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
por: Tsai, Ming-Ta, et al.
Publicado: (2014)

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)

Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading
por: Chang, Le, et al.
Publicado: (2020)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
por: Hu, Xiao-Long, et al.
Publicado: (2015)

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
por: Lin, Tao, et al.
Publicado: (2017)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

Blue light emission from the heterostructured ZnO/InGaN/GaN
por: Wang, Ti, et al.
Publicado: (2013)

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
por: Lin, Tao, et al.
Publicado: (2018)

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
por: Zhu, Yadan, et al.
Publicado: (2017)

Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes
por: Alvi, Naveed ul Hassan, et al.
Publicado: (2011)

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors
por: Shiu, Guo-Yi, et al.
Publicado: (2016)

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N(2)/H(2)-Grown GaN Barrier
por: Zhou, Xiaorun, et al.
Publicado: (2017)

Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer
por: Dong, Jing-Jing, et al.
Publicado: (2014)

Improved light extraction of InGaN/GaN blue LEDs by GaOOH NRAs using a thin ATO seed layer
por: Lee, Hee Kwan, et al.
Publicado: (2012)

Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes
por: Yang, Fann-Wei, et al.
Publicado: (2017)

Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD
por: Sun, Xiaojuan, et al.
Publicado: (2012)

Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts
por: Ha, Ryong, et al.
Publicado: (2013)

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
por: Duque, Carlos M, et al.
Publicado: (2012)

Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells
por: Zhao, Wan-Ru, et al.
Publicado: (2015)

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing
por: Lai, Fang-I, et al.
Publicado: (2013)

White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode
por: Sadaf, JR, et al.
Publicado: (2010)

Enhanced performance of photonic crystal GaN light-emitting diodes with graphene transparent electrodes
por: Ge, Hai-Liang, et al.
Publicado: (2015)

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence
por: Xing, Yao, et al.
Publicado: (2019)

Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires
por: Nicolai, Lars, et al.
Publicado: (2019)

The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
por: Alvi, N H, et al.
Publicado: (2011)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
por: Park, Youngsin, et al.
Publicado: (2018)

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction
por: Du, Chia-Fong, et al.
Publicado: (2014)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD
por: Zhang, Feng, et al.
Publicado: (2016)

GaN nanorods grown on Si (111) substrates and exciton localization
por: Park, Young S, et al.
Publicado: (2011)

Red Light-Emitting Diode Based on Blue InGaN Chip with CdTe(x)S((1 − x)) Quantum Dots
por: Wang, Rongfang, et al.
Publicado: (2017)

State-of-the-art and prospects for intense red radiation from core–shell InGaN/GaN nanorods
por: Evropeitsev, Evgenii A., et al.
Publicado: (2020)

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
por: Sun, Tao, et al.
Publicado: (2020)

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
por: Che, Jiamang, et al.
Publicado: (2018)

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence
por: Abbasi, Mazhar Ali, et al.
Publicado: (2013)

Cannot write session to /tmp/vufind_sessions/sess_mrdmgd1a4up3pe64aenrf4ne5q