Electronic and chemical structure of the H(2)O/GaN(0001) interface under ambient conditions

We employed ambient pressure X-ray photoelectron spectroscopy to investigate the electronic and chemical properties of the H(2)O/GaN(0001) interface under elevated pressures and/or temperatures. A pristine GaN(0001) surface exhibited upward band bending, which was partially flattened when exposed to...

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Detalles Bibliográficos
Autores principales: Zhang, Xueqiang, Ptasinska, Sylwia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4843015/
https://www.ncbi.nlm.nih.gov/pubmed/27108711
http://dx.doi.org/10.1038/srep24848

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4843015/
https://www.ncbi.nlm.nih.gov/pubmed/27108711
http://dx.doi.org/10.1038/srep24848

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