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Electronic and chemical structure of the H(2)O/GaN(0001) interface under ambient conditions
We employed ambient pressure X-ray photoelectron spectroscopy to investigate the electronic and chemical properties of the H(2)O/GaN(0001) interface under elevated pressures and/or temperatures. A pristine GaN(0001) surface exhibited upward band bending, which was partially flattened when exposed to...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4843015/ https://www.ncbi.nlm.nih.gov/pubmed/27108711 http://dx.doi.org/10.1038/srep24848 |