Non-equilibrium induction of tin in germanium: towards direct bandgap Ge(1−x)Sn(x) nanowires

The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge(1−x)Sn(x) alloy na...

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Detalles Bibliográficos
Autores principales: Biswas, Subhajit, Doherty, Jessica, Saladukha, Dzianis, Ramasse, Quentin, Majumdar, Dipanwita, Upmanyu, Moneesh, Singha, Achintya, Ochalski, Tomasz, Morris, Michael A., Holmes, Justin D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4843103/
https://www.ncbi.nlm.nih.gov/pubmed/27095012
http://dx.doi.org/10.1038/ncomms11405

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4843103/
https://www.ncbi.nlm.nih.gov/pubmed/27095012
http://dx.doi.org/10.1038/ncomms11405

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