Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region,...

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Detalles Bibliográficos
Autores principales: He, Chenguang, Qin, Zhixin, Xu, Fujun, Zhang, Lisheng, Wang, Jiaming, Hou, Mengjun, Zhang, Shan, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4844960/
https://www.ncbi.nlm.nih.gov/pubmed/27112969
http://dx.doi.org/10.1038/srep25124

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4844960/
https://www.ncbi.nlm.nih.gov/pubmed/27112969
http://dx.doi.org/10.1038/srep25124

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