Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode

To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO(2) thin films under the ultraviolet (λ = 400 nm) and red-light (λ = 770 nm)...

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Detalles Bibliográficos
Autores principales: Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4846604/
https://www.ncbi.nlm.nih.gov/pubmed/27117634
http://dx.doi.org/10.1186/s11671-016-1431-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4846604/
https://www.ncbi.nlm.nih.gov/pubmed/27117634
http://dx.doi.org/10.1186/s11671-016-1431-8

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