Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode

To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO(2) thin films under the ultraviolet (λ = 400 nm) and red-light (λ = 770 nm)...

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Autores principales: Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4846604/
https://www.ncbi.nlm.nih.gov/pubmed/27117634
http://dx.doi.org/10.1186/s11671-016-1431-8
_version_ 1782429069383565312
author Chen, Kai-Huang
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liang, Shu-Ping
Young, Tai-Fa
Syu, Yong-En
Sze, Simon M.
author_facet Chen, Kai-Huang
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liang, Shu-Ping
Young, Tai-Fa
Syu, Yong-En
Sze, Simon M.
author_sort Chen, Kai-Huang
collection PubMed
description To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO(2) thin films under the ultraviolet (λ = 400 nm) and red-light (λ = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO(2) RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO(2) RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.
format Online
Article
Text
id pubmed-4846604
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-48466042016-05-16 Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode Chen, Kai-Huang Chang, Kuan-Chang Chang, Ting-Chang Tsai, Tsung-Ming Liang, Shu-Ping Young, Tai-Fa Syu, Yong-En Sze, Simon M. Nanoscale Res Lett Nano Express To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO(2) thin films under the ultraviolet (λ = 400 nm) and red-light (λ = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO(2) RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO(2) RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained. Springer US 2016-04-27 /pmc/articles/PMC4846604/ /pubmed/27117634 http://dx.doi.org/10.1186/s11671-016-1431-8 Text en © Chen et al. 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Chen, Kai-Huang
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liang, Shu-Ping
Young, Tai-Fa
Syu, Yong-En
Sze, Simon M.
Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode
title Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode
title_full Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode
title_fullStr Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode
title_full_unstemmed Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode
title_short Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode
title_sort illumination effect on bipolar switching properties of gd:sio(2) rram devices using transparent indium tin oxide electrode
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4846604/
https://www.ncbi.nlm.nih.gov/pubmed/27117634
http://dx.doi.org/10.1186/s11671-016-1431-8
work_keys_str_mv AT chenkaihuang illuminationeffectonbipolarswitchingpropertiesofgdsio2rramdevicesusingtransparentindiumtinoxideelectrode
AT changkuanchang illuminationeffectonbipolarswitchingpropertiesofgdsio2rramdevicesusingtransparentindiumtinoxideelectrode
AT changtingchang illuminationeffectonbipolarswitchingpropertiesofgdsio2rramdevicesusingtransparentindiumtinoxideelectrode
AT tsaitsungming illuminationeffectonbipolarswitchingpropertiesofgdsio2rramdevicesusingtransparentindiumtinoxideelectrode
AT liangshuping illuminationeffectonbipolarswitchingpropertiesofgdsio2rramdevicesusingtransparentindiumtinoxideelectrode
AT youngtaifa illuminationeffectonbipolarswitchingpropertiesofgdsio2rramdevicesusingtransparentindiumtinoxideelectrode
AT syuyongen illuminationeffectonbipolarswitchingpropertiesofgdsio2rramdevicesusingtransparentindiumtinoxideelectrode
AT szesimonm illuminationeffectonbipolarswitchingpropertiesofgdsio2rramdevicesusingtransparentindiumtinoxideelectrode

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