High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(−1)s(−1). The threshold vo...

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Detalles Bibliográficos
Autores principales: Xiao, Peng, Dong, Ting, Lan, Linfeng, Lin, Zhenguo, Song, Wei, Luo, Dongxiang, Xu, Miao, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4846996/
https://www.ncbi.nlm.nih.gov/pubmed/27118177
http://dx.doi.org/10.1038/srep25000

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4846996/
https://www.ncbi.nlm.nih.gov/pubmed/27118177
http://dx.doi.org/10.1038/srep25000

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