High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(−1)s(−1). The threshold vo...

Descripción completa

Detalles Bibliográficos
Autores principales: Xiao, Peng, Dong, Ting, Lan, Linfeng, Lin, Zhenguo, Song, Wei, Luo, Dongxiang, Xu, Miao, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4846996/
https://www.ncbi.nlm.nih.gov/pubmed/27118177
http://dx.doi.org/10.1038/srep25000
_version_ 1782429124491476992
author Xiao, Peng
Dong, Ting
Lan, Linfeng
Lin, Zhenguo
Song, Wei
Luo, Dongxiang
Xu, Miao
Peng, Junbiao
author_facet Xiao, Peng
Dong, Ting
Lan, Linfeng
Lin, Zhenguo
Song, Wei
Luo, Dongxiang
Xu, Miao
Peng, Junbiao
author_sort Xiao, Peng
collection PubMed
description Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(−1)s(−1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction.
format Online
Article
Text
id pubmed-4846996
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-48469962016-05-04 High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature Xiao, Peng Dong, Ting Lan, Linfeng Lin, Zhenguo Song, Wei Luo, Dongxiang Xu, Miao Peng, Junbiao Sci Rep Article Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(−1)s(−1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction. Nature Publishing Group 2016-04-27 /pmc/articles/PMC4846996/ /pubmed/27118177 http://dx.doi.org/10.1038/srep25000 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Xiao, Peng
Dong, Ting
Lan, Linfeng
Lin, Zhenguo
Song, Wei
Luo, Dongxiang
Xu, Miao
Peng, Junbiao
High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature
title High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature
title_full High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature
title_fullStr High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature
title_full_unstemmed High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature
title_short High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature
title_sort high-mobility zrino thin-film transistor prepared by an all-dc-sputtering method at room temperature
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4846996/
https://www.ncbi.nlm.nih.gov/pubmed/27118177
http://dx.doi.org/10.1038/srep25000
work_keys_str_mv AT xiaopeng highmobilityzrinothinfilmtransistorpreparedbyanalldcsputteringmethodatroomtemperature
AT dongting highmobilityzrinothinfilmtransistorpreparedbyanalldcsputteringmethodatroomtemperature
AT lanlinfeng highmobilityzrinothinfilmtransistorpreparedbyanalldcsputteringmethodatroomtemperature
AT linzhenguo highmobilityzrinothinfilmtransistorpreparedbyanalldcsputteringmethodatroomtemperature
AT songwei highmobilityzrinothinfilmtransistorpreparedbyanalldcsputteringmethodatroomtemperature
AT luodongxiang highmobilityzrinothinfilmtransistorpreparedbyanalldcsputteringmethodatroomtemperature
AT xumiao highmobilityzrinothinfilmtransistorpreparedbyanalldcsputteringmethodatroomtemperature
AT pengjunbiao highmobilityzrinothinfilmtransistorpreparedbyanalldcsputteringmethodatroomtemperature

Ejemplares similares