Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, th...

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Detalles Bibliográficos
Autores principales: Myoung, Nojoon, Park, Hee Chul, Lee, Seung Joo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4850479/
https://www.ncbi.nlm.nih.gov/pubmed/27126101
http://dx.doi.org/10.1038/srep25253

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4850479/
https://www.ncbi.nlm.nih.gov/pubmed/27126101
http://dx.doi.org/10.1038/srep25253

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