Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors

Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequ...

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Detalles Bibliográficos
Autores principales: Song, Seung Min, Bong, Jae Hoon, Hwang, Wan Sik, Cho, Byung Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4855167/
https://www.ncbi.nlm.nih.gov/pubmed/27142861
http://dx.doi.org/10.1038/srep25392

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4855167/
https://www.ncbi.nlm.nih.gov/pubmed/27142861
http://dx.doi.org/10.1038/srep25392

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