High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial techni...

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Detalles Bibliográficos
Autores principales: Renard, Charles, Molière, Timothée, Cherkashin, Nikolay, Alvarez, José, Vincent, Laetitia, Jaffré, Alexandre, Hallais, Géraldine, Connolly, James Patrick, Mencaraglia, Denis, Bouchier, Daniel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4855173/
https://www.ncbi.nlm.nih.gov/pubmed/27142097
http://dx.doi.org/10.1038/srep25328

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4855173/
https://www.ncbi.nlm.nih.gov/pubmed/27142097
http://dx.doi.org/10.1038/srep25328

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