Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO(3) Thin Films with High Dielectric Response

BiFeO(3) is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ < 0.01) obtained on Bi(0.95)Y(0.05)FeO(3) films ep...

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Detalles Bibliográficos
Autores principales: Scarisoreanu, N. D., Craciun, F., Birjega, R., Ion, V., Teodorescu, V. S., Ghica, C., Negrea, R., Dinescu, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4860595/
https://www.ncbi.nlm.nih.gov/pubmed/27157090
http://dx.doi.org/10.1038/srep25535

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4860595/
https://www.ncbi.nlm.nih.gov/pubmed/27157090
http://dx.doi.org/10.1038/srep25535

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