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Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO(3) Thin Films with High Dielectric Response
BiFeO(3) is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ < 0.01) obtained on Bi(0.95)Y(0.05)FeO(3) films ep...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4860595/ https://www.ncbi.nlm.nih.gov/pubmed/27157090 http://dx.doi.org/10.1038/srep25535 |
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author | Scarisoreanu, N. D. Craciun, F. Birjega, R. Ion, V. Teodorescu, V. S. Ghica, C. Negrea, R. Dinescu, M. |
author_facet | Scarisoreanu, N. D. Craciun, F. Birjega, R. Ion, V. Teodorescu, V. S. Ghica, C. Negrea, R. Dinescu, M. |
author_sort | Scarisoreanu, N. D. |
collection | PubMed |
description | BiFeO(3) is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ < 0.01) obtained on Bi(0.95)Y(0.05)FeO(3) films epitaxially grown on SrTiO(3) (001) by pulsed laser deposition. High resolution transmission electron microscopy and geometric phase analysis evidenced nanostripe domains with alternating compressive/tensile strain and slight lattice rotations. Nanoscale mixed phase/domain ensembles are commonly found in different complex materials with giant dielectric/electromechanical (ferroelectric/ relaxors) or magnetoresistance (manganites) response. Our work brings insight into the joined role of chemical pressure and epitaxial strain on the appearance of nanoscale stripe structure which creates conditions for easy reorientation and high dielectric response, and could be of more general relevance for the field of materials science where engineered materials with huge response to external stimuli are a highly priced target. |
format | Online Article Text |
id | pubmed-4860595 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-48605952016-05-20 Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO(3) Thin Films with High Dielectric Response Scarisoreanu, N. D. Craciun, F. Birjega, R. Ion, V. Teodorescu, V. S. Ghica, C. Negrea, R. Dinescu, M. Sci Rep Article BiFeO(3) is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ < 0.01) obtained on Bi(0.95)Y(0.05)FeO(3) films epitaxially grown on SrTiO(3) (001) by pulsed laser deposition. High resolution transmission electron microscopy and geometric phase analysis evidenced nanostripe domains with alternating compressive/tensile strain and slight lattice rotations. Nanoscale mixed phase/domain ensembles are commonly found in different complex materials with giant dielectric/electromechanical (ferroelectric/ relaxors) or magnetoresistance (manganites) response. Our work brings insight into the joined role of chemical pressure and epitaxial strain on the appearance of nanoscale stripe structure which creates conditions for easy reorientation and high dielectric response, and could be of more general relevance for the field of materials science where engineered materials with huge response to external stimuli are a highly priced target. Nature Publishing Group 2016-05-09 /pmc/articles/PMC4860595/ /pubmed/27157090 http://dx.doi.org/10.1038/srep25535 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Scarisoreanu, N. D. Craciun, F. Birjega, R. Ion, V. Teodorescu, V. S. Ghica, C. Negrea, R. Dinescu, M. Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO(3) Thin Films with High Dielectric Response |
title | Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO(3) Thin Films with High Dielectric Response |
title_full | Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO(3) Thin Films with High Dielectric Response |
title_fullStr | Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO(3) Thin Films with High Dielectric Response |
title_full_unstemmed | Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO(3) Thin Films with High Dielectric Response |
title_short | Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO(3) Thin Films with High Dielectric Response |
title_sort | joining chemical pressure and epitaxial strain to yield y-doped bifeo(3) thin films with high dielectric response |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4860595/ https://www.ncbi.nlm.nih.gov/pubmed/27157090 http://dx.doi.org/10.1038/srep25535 |
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