Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface po...

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Detalles Bibliográficos
Autores principales: Cariou, Romain, Chen, Wanghua, Maurice, Jean-Luc, Yu, Jingwen, Patriarche, Gilles, Mauguin, Olivia, Largeau, Ludovic, Decobert, Jean, Roca i Cabarrocas, Pere
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4863370/
https://www.ncbi.nlm.nih.gov/pubmed/27166163
http://dx.doi.org/10.1038/srep25674

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4863370/
https://www.ncbi.nlm.nih.gov/pubmed/27166163
http://dx.doi.org/10.1038/srep25674

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