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Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration
The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface po...
Autores principales: | Cariou, Romain, Chen, Wanghua, Maurice, Jean-Luc, Yu, Jingwen, Patriarche, Gilles, Mauguin, Olivia, Largeau, Ludovic, Decobert, Jean, Roca i Cabarrocas, Pere |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4863370/ https://www.ncbi.nlm.nih.gov/pubmed/27166163 http://dx.doi.org/10.1038/srep25674 |
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