Characterization of Graphene-based FET Fabricated using a Shadow Mask

To pattern electrical metal contacts, electron beam lithography or photolithography are commonly utilized, and these processes require polymer resists with solvents. During the patterning process the graphene surface is exposed to chemicals, and the residue on the graphene surface was unable to be completely removed by any method, causing the graphene layer to be contaminated. A lithography free method can overcome these residue problems. In this study, we use a micro-grid as a shadow mask to fabricate a graphene based field-effect-transistor (FET). Electrical measurements of the graphene based FET samples are carried out in air and vacuum. It is found that the Dirac peaks of the graphene devices on SiO(2) or on hexagonal boron nitride (hBN) shift from a positive gate voltage region to a negative region as air pressure decreases. In particular, the Dirac peaks shift very rapidly when the pressure decreases from ~2 × 10(−3) Torr to ~5 × 10(−5) Torr within 5 minutes. These Dirac peak shifts are known as adsorption and desorption of environmental gases, but the shift amounts are considerably different depending on the fabrication process. The high gas sensitivity of the device fabricated by shadow mask is attributed to adsorption on the clean graphene surface.