The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxa...

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Detalles Bibliográficos
Autores principales: Kuchuk, Andrian V., Kryvyi, Serhii, Lytvyn, Petro M., Li, Shibin, Kladko, Vasyl P., Ware, Morgan E., Mazur, Yuriy I., Safryuk, Nadiia V., Stanchu, Hryhorii V., Belyaev, Alexander E., Salamo, Gregory J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4870488/
https://www.ncbi.nlm.nih.gov/pubmed/27184965
http://dx.doi.org/10.1186/s11671-016-1478-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4870488/
https://www.ncbi.nlm.nih.gov/pubmed/27184965
http://dx.doi.org/10.1186/s11671-016-1478-6

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