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Fast electronic resistance switching involving hidden charge density wave states

The functionality of computer memory elements is currently based on multi-stability, driven either by locally manipulating the density of electrons in transistors or by switching magnetic or ferroelectric order. Another possibility is switching between metallic and insulating phases by the motion of...

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Detalles Bibliográficos
Autores principales: Vaskivskyi, I., Mihailovic, I. A., Brazovskii, S., Gospodaric, J., Mertelj, T., Svetin, D., Sutar, P., Mihailovic, D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4873615/
https://www.ncbi.nlm.nih.gov/pubmed/27181483
http://dx.doi.org/10.1038/ncomms11442