Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapo...

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Detalles Bibliográficos
Autores principales: Kim, Ye Kyun, Ahn, Cheol Hyoun, Yun, Myeong Gu, Cho, Sung Woon, Kang, Won Jun, Cho, Hyung Koun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4873798/
https://www.ncbi.nlm.nih.gov/pubmed/27198067
http://dx.doi.org/10.1038/srep26287

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4873798/
https://www.ncbi.nlm.nih.gov/pubmed/27198067
http://dx.doi.org/10.1038/srep26287

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