Pulsed laser deposited GeTe-rich GeTe-Sb(2)Te(3) thin films

Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb(2)Te(3) (Ge(6)Sb(2)Te(9), Ge(8)Sb(2)Te(11), Ge(10)Sb(2)Te(13), and Ge(12)Sb(2)Te(15)) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST...

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Detalles Bibliográficos
Autores principales: Bouška, M., Pechev, S., Simon, Q., Boidin, R., Nazabal, V., Gutwirth, J., Baudet, E., Němec, P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4873812/
https://www.ncbi.nlm.nih.gov/pubmed/27199107
http://dx.doi.org/10.1038/srep26552

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4873812/
https://www.ncbi.nlm.nih.gov/pubmed/27199107
http://dx.doi.org/10.1038/srep26552

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