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A Systematic Approach for Multidimensional, Closed-Form Analytic Modeling: Minority Electron Mobilities in Ga(1−x)Al(x)As Heterostructures
A significant, practical challenge, which arises in developing computationally efficient physical models for use in computer simulations of microelectronic and optoelectronic devices (for example, transistors in digital cellular phones and lasers in optical networks, respectively), is to represent v...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
2000
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4874769/ https://www.ncbi.nlm.nih.gov/pubmed/27551616 http://dx.doi.org/10.6028/jres.105.037 |