Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy

Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by...

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Detalles Bibliográficos
Autores principales: Liu, Ting, Zhang, Jicai, Su, Xujun, Huang, Jun, Wang, Jianfeng, Xu, Ke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4877591/
https://www.ncbi.nlm.nih.gov/pubmed/27185345
http://dx.doi.org/10.1038/srep26040

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4877591/
https://www.ncbi.nlm.nih.gov/pubmed/27185345
http://dx.doi.org/10.1038/srep26040

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