Cargando…

Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy

Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Ting, Zhang, Jicai, Su, Xujun, Huang, Jun, Wang, Jianfeng, Xu, Ke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4877591/
https://www.ncbi.nlm.nih.gov/pubmed/27185345
http://dx.doi.org/10.1038/srep26040
_version_ 1782433408226426880
author Liu, Ting
Zhang, Jicai
Su, Xujun
Huang, Jun
Wang, Jianfeng
Xu, Ke
author_facet Liu, Ting
Zhang, Jicai
Su, Xujun
Huang, Jun
Wang, Jianfeng
Xu, Ke
author_sort Liu, Ting
collection PubMed
description Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of ([Image: see text]) semi-polar AlN on (0001) AlN by constructing ([Image: see text]) and ([Image: see text]) twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN.
format Online
Article
Text
id pubmed-4877591
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-48775912016-06-08 Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy Liu, Ting Zhang, Jicai Su, Xujun Huang, Jun Wang, Jianfeng Xu, Ke Sci Rep Article Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of ([Image: see text]) semi-polar AlN on (0001) AlN by constructing ([Image: see text]) and ([Image: see text]) twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN. Nature Publishing Group 2016-05-17 /pmc/articles/PMC4877591/ /pubmed/27185345 http://dx.doi.org/10.1038/srep26040 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Liu, Ting
Zhang, Jicai
Su, Xujun
Huang, Jun
Wang, Jianfeng
Xu, Ke
Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
title Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
title_full Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
title_fullStr Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
title_full_unstemmed Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
title_short Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
title_sort nucleation and growth of (10(¯)11) semi-polar aln on (0001) aln by hydride vapor phase epitaxy
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4877591/
https://www.ncbi.nlm.nih.gov/pubmed/27185345
http://dx.doi.org/10.1038/srep26040
work_keys_str_mv AT liuting nucleationandgrowthof1011semipolaralnon0001alnbyhydridevaporphaseepitaxy
AT zhangjicai nucleationandgrowthof1011semipolaralnon0001alnbyhydridevaporphaseepitaxy
AT suxujun nucleationandgrowthof1011semipolaralnon0001alnbyhydridevaporphaseepitaxy
AT huangjun nucleationandgrowthof1011semipolaralnon0001alnbyhydridevaporphaseepitaxy
AT wangjianfeng nucleationandgrowthof1011semipolaralnon0001alnbyhydridevaporphaseepitaxy
AT xuke nucleationandgrowthof1011semipolaralnon0001alnbyhydridevaporphaseepitaxy