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Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we...

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Detalles Bibliográficos
Autores principales:	Ling, Zhi-Peng, Zhu, Jun-Tao, Liu, Xinke, Ang, Kah-Wee
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4879535/ https://www.ncbi.nlm.nih.gov/pubmed/27222074 http://dx.doi.org/10.1038/srep26609

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