The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. Th...

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Detalles Bibliográficos
Autores principales: Lutz, Gerhard, Porro, Matteo, Aschauer, Stefan, Wölfel, Stefan, Strüder, Lothar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4883299/
https://www.ncbi.nlm.nih.gov/pubmed/27136549
http://dx.doi.org/10.3390/s16050608

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4883299/
https://www.ncbi.nlm.nih.gov/pubmed/27136549
http://dx.doi.org/10.3390/s16050608

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