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The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors
Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. Th...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4883299/ https://www.ncbi.nlm.nih.gov/pubmed/27136549 http://dx.doi.org/10.3390/s16050608 |
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author | Lutz, Gerhard Porro, Matteo Aschauer, Stefan Wölfel, Stefan Strüder, Lothar |
author_facet | Lutz, Gerhard Porro, Matteo Aschauer, Stefan Wölfel, Stefan Strüder, Lothar |
author_sort | Lutz, Gerhard |
collection | PubMed |
description | Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. |
format | Online Article Text |
id | pubmed-4883299 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-48832992016-05-27 The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors Lutz, Gerhard Porro, Matteo Aschauer, Stefan Wölfel, Stefan Strüder, Lothar Sensors (Basel) Article Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. MDPI 2016-04-28 /pmc/articles/PMC4883299/ /pubmed/27136549 http://dx.doi.org/10.3390/s16050608 Text en © 2016 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Lutz, Gerhard Porro, Matteo Aschauer, Stefan Wölfel, Stefan Strüder, Lothar The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors |
title | The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors |
title_full | The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors |
title_fullStr | The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors |
title_full_unstemmed | The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors |
title_short | The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors |
title_sort | depfet sensor-amplifier structure: a method to beat 1/f noise and reach sub-electron noise in pixel detectors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4883299/ https://www.ncbi.nlm.nih.gov/pubmed/27136549 http://dx.doi.org/10.3390/s16050608 |
work_keys_str_mv | AT lutzgerhard thedepfetsensoramplifierstructureamethodtobeat1fnoiseandreachsubelectronnoiseinpixeldetectors AT porromatteo thedepfetsensoramplifierstructureamethodtobeat1fnoiseandreachsubelectronnoiseinpixeldetectors AT aschauerstefan thedepfetsensoramplifierstructureamethodtobeat1fnoiseandreachsubelectronnoiseinpixeldetectors AT wolfelstefan thedepfetsensoramplifierstructureamethodtobeat1fnoiseandreachsubelectronnoiseinpixeldetectors AT struderlothar thedepfetsensoramplifierstructureamethodtobeat1fnoiseandreachsubelectronnoiseinpixeldetectors AT lutzgerhard depfetsensoramplifierstructureamethodtobeat1fnoiseandreachsubelectronnoiseinpixeldetectors AT porromatteo depfetsensoramplifierstructureamethodtobeat1fnoiseandreachsubelectronnoiseinpixeldetectors AT aschauerstefan depfetsensoramplifierstructureamethodtobeat1fnoiseandreachsubelectronnoiseinpixeldetectors AT wolfelstefan depfetsensoramplifierstructureamethodtobeat1fnoiseandreachsubelectronnoiseinpixeldetectors AT struderlothar depfetsensoramplifierstructureamethodtobeat1fnoiseandreachsubelectronnoiseinpixeldetectors |