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The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. Th...

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Detalles Bibliográficos
Autores principales: Lutz, Gerhard, Porro, Matteo, Aschauer, Stefan, Wölfel, Stefan, Strüder, Lothar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4883299/
https://www.ncbi.nlm.nih.gov/pubmed/27136549
http://dx.doi.org/10.3390/s16050608
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author Lutz, Gerhard
Porro, Matteo
Aschauer, Stefan
Wölfel, Stefan
Strüder, Lothar
author_facet Lutz, Gerhard
Porro, Matteo
Aschauer, Stefan
Wölfel, Stefan
Strüder, Lothar
author_sort Lutz, Gerhard
collection PubMed
description Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell.
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spelling pubmed-48832992016-05-27 The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors Lutz, Gerhard Porro, Matteo Aschauer, Stefan Wölfel, Stefan Strüder, Lothar Sensors (Basel) Article Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. MDPI 2016-04-28 /pmc/articles/PMC4883299/ /pubmed/27136549 http://dx.doi.org/10.3390/s16050608 Text en © 2016 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lutz, Gerhard
Porro, Matteo
Aschauer, Stefan
Wölfel, Stefan
Strüder, Lothar
The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors
title The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors
title_full The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors
title_fullStr The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors
title_full_unstemmed The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors
title_short The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors
title_sort depfet sensor-amplifier structure: a method to beat 1/f noise and reach sub-electron noise in pixel detectors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4883299/
https://www.ncbi.nlm.nih.gov/pubmed/27136549
http://dx.doi.org/10.3390/s16050608
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