Reactive Ion Etching in the Gaseous Electronics Conference RF Reference Cell

This paper describes the results of using the GEC reference cell as a reactive ion etcher. Silicon wafers with layers of polysilicon and silicon dioxide on crystaline silicon patterned with photoresist have been investigated with fluorine and chlorine chemistries. Scanning electron microscopy (SEM),...

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Detalles Bibliográficos
Autores principales: Brake, M. L., Pender, J. T. P., Buie, M. J., Ricci, A., Soniker, J., Pochan, P. D., Miller, P. A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1995
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4887231/
https://www.ncbi.nlm.nih.gov/pubmed/29151753
http://dx.doi.org/10.6028/jres.100.033

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4887231/
https://www.ncbi.nlm.nih.gov/pubmed/29151753
http://dx.doi.org/10.6028/jres.100.033

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