Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film

Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that bot...

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Detalles Bibliográficos
Autores principales: Qin, Xuesi, Li, Guojian, Xiao, Lin, Chen, Guozhen, Wang, Kai, Wang, Qiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4889532/
https://www.ncbi.nlm.nih.gov/pubmed/27251324
http://dx.doi.org/10.1186/s11671-016-1485-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4889532/
https://www.ncbi.nlm.nih.gov/pubmed/27251324
http://dx.doi.org/10.1186/s11671-016-1485-7

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