IMPATT Diodes Based on 〈111〉, 〈100〉, and 〈110〉 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 〈111〉, 〈100〉, and 〈110〉 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S per...

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Detalles Bibliográficos
Autores principales: Banerjee, Bhadrani, Tripathi, Anvita, Das, Adrija, Singh, Kumari Alka, Acharyya, Aritra, Banerjee, J. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi Publishing Corporation 2015
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4897271/
https://www.ncbi.nlm.nih.gov/pubmed/27347524
http://dx.doi.org/10.1155/2015/484768

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4897271/
https://www.ncbi.nlm.nih.gov/pubmed/27347524
http://dx.doi.org/10.1155/2015/484768

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