Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout

In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET h...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Min Su, Lee, Hee Chul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi Publishing Corporation 2014
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4897586/
https://www.ncbi.nlm.nih.gov/pubmed/27350975
http://dx.doi.org/10.1155/2014/145759

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4897586/
https://www.ncbi.nlm.nih.gov/pubmed/27350975
http://dx.doi.org/10.1155/2014/145759

Ejemplares similares