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Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout

In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET h...

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Detalles Bibliográficos
Autores principales:	Lee, Min Su, Lee, Hee Chul
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Hindawi Publishing Corporation 2014
Materias:	Research Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4897586/ https://www.ncbi.nlm.nih.gov/pubmed/27350975 http://dx.doi.org/10.1155/2014/145759

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