Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer

A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The c...

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Detalles Bibliográficos
Autores principales: Jia, Xiuling, Chen, Dunjun, Bin, Liu, Lu, Hai, Zhang, Rong, Zheng, Youdou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4899738/
https://www.ncbi.nlm.nih.gov/pubmed/27278795
http://dx.doi.org/10.1038/srep27728

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4899738/
https://www.ncbi.nlm.nih.gov/pubmed/27278795
http://dx.doi.org/10.1038/srep27728

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