Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer

A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The c...

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Detalles Bibliográficos
Autores principales: Jia, Xiuling, Chen, Dunjun, Bin, Liu, Lu, Hai, Zhang, Rong, Zheng, Youdou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4899738/
https://www.ncbi.nlm.nih.gov/pubmed/27278795
http://dx.doi.org/10.1038/srep27728
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author Jia, Xiuling
Chen, Dunjun
Bin, Liu
Lu, Hai
Zhang, Rong
Zheng, Youdou
author_facet Jia, Xiuling
Chen, Dunjun
Bin, Liu
Lu, Hai
Zhang, Rong
Zheng, Youdou
author_sort Jia, Xiuling
collection PubMed
description A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The current response showed that the fabricated sensor is highly sensitive and selective to phosphate anions. The current change exhibited approximate linear dependence for phosphate concentration from 0.02 mg L(−1) to 2 mg L(−1), the sensitivity and detection limit of the sensor is 3.191 μA/mg L(−1) and 1.97 μg L(−1), respectively. The results indicated that this AlGaN/GaN HEMT-based electrochemical sensor has the potential applications on phosphate anion detection.
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spelling pubmed-48997382016-06-13 Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer Jia, Xiuling Chen, Dunjun Bin, Liu Lu, Hai Zhang, Rong Zheng, Youdou Sci Rep Article A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The current response showed that the fabricated sensor is highly sensitive and selective to phosphate anions. The current change exhibited approximate linear dependence for phosphate concentration from 0.02 mg L(−1) to 2 mg L(−1), the sensitivity and detection limit of the sensor is 3.191 μA/mg L(−1) and 1.97 μg L(−1), respectively. The results indicated that this AlGaN/GaN HEMT-based electrochemical sensor has the potential applications on phosphate anion detection. Nature Publishing Group 2016-06-09 /pmc/articles/PMC4899738/ /pubmed/27278795 http://dx.doi.org/10.1038/srep27728 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Jia, Xiuling
Chen, Dunjun
Bin, Liu
Lu, Hai
Zhang, Rong
Zheng, Youdou
Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer
title Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer
title_full Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer
title_fullStr Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer
title_full_unstemmed Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer
title_short Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer
title_sort highly selective and sensitive phosphate anion sensors based on algan/gan high electron mobility transistors functionalized by ion imprinted polymer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4899738/
https://www.ncbi.nlm.nih.gov/pubmed/27278795
http://dx.doi.org/10.1038/srep27728
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