Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS(2) MOSFET with an AlN Interfacial Layer

Transistors based on MoS(2) and other TMDs have been widely studied. The dangling-bond free surface of MoS(2) has made the deposition of high-quality high-k dielectrics on MoS(2) a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density tra...

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Detalles Bibliográficos
Autores principales: Qian, Qingkai, Li, Baikui, Hua, Mengyuan, Zhang, Zhaofu, Lan, Feifei, Xu, Yongkuan, Yan, Ruyue, Chen, Kevin J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4899804/
https://www.ncbi.nlm.nih.gov/pubmed/27279454
http://dx.doi.org/10.1038/srep27676

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4899804/
https://www.ncbi.nlm.nih.gov/pubmed/27279454
http://dx.doi.org/10.1038/srep27676

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