Ultra-doped n-type germanium thin films for sensing in the mid-infrared

A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high ca...

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Detalles Bibliográficos
Autores principales: Prucnal, Slawomir, Liu, Fang, Voelskow, Matthias, Vines, Lasse, Rebohle, Lars, Lang, Denny, Berencén, Yonder, Andric, Stefan, Boettger, Roman, Helm, Manfred, Zhou, Shengqiang, Skorupa, Wolfgang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4901323/
https://www.ncbi.nlm.nih.gov/pubmed/27282547
http://dx.doi.org/10.1038/srep27643

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4901323/
https://www.ncbi.nlm.nih.gov/pubmed/27282547
http://dx.doi.org/10.1038/srep27643

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